For Reference Only
| Part Number | DRA2115E0L |
| Manufacturer | Panasonic Electronic Components |
| Category | Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Description | TRANS PREBIAS PNP 200MW MINI3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | DRA2115E0L PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 20 - Nov 24 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | DRA2115E0L |
| Brand: | Panasonic Electronic Components |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer: | Panasonic Electronic Components |
| Product Status: | Discontinued at Digi-Key |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100 mA |
| Voltage - Collector Emitter Breakdown (Max): | 50 V |
| Resistor - Base (R1): | 100 kOhms |
| Resistor - Emitter Base (R2): | 100 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | - |
| Power - Max: | 200 mW |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | MINI3-G3-B |
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| In Stock | 97274 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3000 | $0.07581 | $227.43 |
| 6000 | $0.06823 | $409.38 |
| 15000 | $0.06065 | $909.75 |
| 30000 | $0.05686 | $1705.8 |
| 75000 | $0.05054 | $3790.5 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
