NXH50C120L2C2ESG

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Part Number	NXH50C120L2C2ESG
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - IGBTs - Modules
Description	IGBT MODULE, CIB 1200 V, 50 A IG
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NXH50C120L2C2ESG PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 28 - Jan 01 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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NXH50C120L2C2ESG Specifications

Part Number:	NXH50C120L2C2ESG
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Modules
Manufacturer:	onsemi
Product Status:	Active
IGBT Type:	-
Configuration:	Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	50 A
Power - Max:	20 mW
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 50A
Current - Collector Cutoff (Max):	250 µA
Input Capacitance (Cies) @ Vce:	11.897 nF @ 20 V
Input:	Three Phase Bridge Rectifier
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	26-PowerDIP Module (1.199", 47.20mm)
Supplier Device Package:	26-DIP

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