NVH4L015N065SC1

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Part Number	NVH4L015N065SC1
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SIC MOS TO247-4L 650V
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NVH4L015N065SC1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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NVH4L015N065SC1 Specifications

Part Number:	NVH4L015N065SC1
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	onsemi
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	142A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	15V, 18V
Rds On (Max) @ Id, Vgs:	18mOhm @ 75A, 18V
Vgs(th) (Max) @ Id:	4.3V @ 25mA
Gate Charge (Qg) (Max) @ Vgs:	283 nC @ 18 V
Vgs (Max):	+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds:	4790 pF @ 325 V
FET Feature:	-
Power Dissipation (Max):	500W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-4L
Package / Case:	TO-247-4

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