NVBG080N120SC1

NVBG080N120SC1
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Part Number NVBG080N120SC1
Manufacturer onsemi
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description SICFET N-CH 1200V 30A D2PAK-7
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NVBG080N120SC1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 06 - Nov 10 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

NVBG080N120SC1 Specifications

Part Number:NVBG080N120SC1
Brand:onsemi
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:onsemi
Product Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1154 pF @ 800 V
FET Feature:-
Power Dissipation (Max):179W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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In Stock 8412 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$13.77000$13.77

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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