NVBG020N090SC1

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Part Number	NVBG020N090SC1
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SICFET N-CH 900V 9.8A/112A D2PAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NVBG020N090SC1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 16 - Nov 20 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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NVBG020N090SC1 Specifications

Part Number:	NVBG020N090SC1
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	onsemi
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	900 V
Current - Continuous Drain (Id) @ 25°C:	9.8A (Ta), 112A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	15V
Rds On (Max) @ Id, Vgs:	28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id:	4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:	200 nC @ 15 V
Vgs (Max):	+19V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	4415 pF @ 450 V
FET Feature:	-
Power Dissipation (Max):	3.7W (Ta), 477W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK-7
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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