NTH4L020N120SC1

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Part Number	NTH4L020N120SC1
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SICFET N-CH 1200V 102A TO247
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NTH4L020N120SC1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

NTH4L020N120SC1 Specifications

Part Number:	NTH4L020N120SC1
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	onsemi
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	102A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id:	4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:	220 nC @ 20 V
Vgs (Max):	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:	2943 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	510W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-4L
Package / Case:	TO-247-4

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