NTD4809N-35G

NTD4809N-35G
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Part Number NTD4809N-35G
Manufacturer onsemi
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 9.6A/58A IPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NTD4809N-35G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 06 - Nov 10 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

NTD4809N-35G Specifications

Part Number:NTD4809N-35G
Brand:onsemi
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:onsemi
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1456 pF @ 12 V
FET Feature:-
Power Dissipation (Max):1.4W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-Pak
Package / Case:TO-251-3 Stub Leads, IPak

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