NTD3813N-1G

NTD3813N-1G
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Part Number NTD3813N-1G
Manufacturer onsemi
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 16V 9.6A/51A IPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NTD3813N-1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 01 - Dec 05 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

NTD3813N-1G Specifications

Part Number:NTD3813N-1G
Brand:onsemi
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:onsemi
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):16 V
Current - Continuous Drain (Id) @ 25°C:9.6A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.8 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:963 pF @ 12 V
FET Feature:-
Power Dissipation (Max):1.2W (Ta), 34.9W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.20000$0.2

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