NTC080N120SC1

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Part Number	NTC080N120SC1
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SIC MOS WAFER SALES 80MOHM 1200V
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NTC080N120SC1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 28 - Dec 02 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

NTC080N120SC1 Specifications

Part Number:	NTC080N120SC1
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	onsemi
Product Status:	Last Time Buy
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:	4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:	56 nC @ 20 V
Vgs (Max):	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:	1112 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	178W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	Die
Package / Case:	Die

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