NSS40301MDR2G

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Part Number	NSS40301MDR2G
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays
Description	TRANS 2NPN 40V 3A 8SOIC
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NSS40301MDR2G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 07 - Dec 11 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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NSS40301MDR2G Specifications

Part Number:	NSS40301MDR2G
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Arrays
Manufacturer:	onsemi
Product Status:	Active
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	115mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 1A, 2V
Power - Max:	653mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

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