NJVMJD112G

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Part Number	NJVMJD112G
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS NPN DARL 100V 2A DPAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NJVMJD112G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 15 - Nov 19 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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NJVMJD112G Specifications

Part Number:	NJVMJD112G
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	onsemi
Product Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 40mA, 4A
Current - Collector Cutoff (Max):	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 2A, 3V
Power - Max:	1.75 W
Frequency - Transition:	25MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

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