NJVMJD112G

NJVMJD112G
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Part Number NJVMJD112G
Manufacturer onsemi
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single
Description TRANS NPN DARL 100V 2A DPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NJVMJD112G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 28 - Dec 02 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

NJVMJD112G Specifications

Part Number:NJVMJD112G
Brand:onsemi
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:onsemi
Product Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Power - Max:1.75 W
Frequency - Transition:25MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK

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Quick Inquiry

In Stock 51785 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
825$0.39270$323.9775

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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