NGTB35N65FL2WG

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Part Number	NGTB35N65FL2WG
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT TRENCH/FS 650V 70A TO247
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NGTB35N65FL2WG PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 28 - Jan 01 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

NGTB35N65FL2WG Specifications

Part Number:	NGTB35N65FL2WG
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	onsemi
Product Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	70 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 35A
Power - Max:	300 W
Switching Energy:	840µJ (on), 280µJ (off)
Input Type:	Standard
Gate Charge:	125 nC
Td (on/off) @ 25°C:	72ns/132ns
Test Condition:	400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr):	68 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3

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