NGTB10N60R2DT4G

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Part Number	NGTB10N60R2DT4G
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT 600V 20A DPAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NGTB10N60R2DT4G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 11 - Nov 15 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

NGTB10N60R2DT4G Specifications

Part Number:	NGTB10N60R2DT4G
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	onsemi
Product Status:	Obsolete
IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	20 A
Current - Collector Pulsed (Icm):	40 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 10A
Power - Max:	72 W
Switching Energy:	412µJ (on), 140µJ (off)
Input Type:	Standard
Gate Charge:	53 nC
Td (on/off) @ 25°C:	48ns/120ns
Test Condition:	300V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr):	90 ns
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

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