NGB8207ABNT4G

NGB8207ABNT4G
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Part Number NGB8207ABNT4G
Manufacturer onsemi
Category Discrete SemiconductorTransistors - IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTO
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NGB8207ABNT4G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 15 - Nov 19 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

NGB8207ABNT4G Specifications

Part Number:NGB8207ABNT4G
Brand:onsemi
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Single
Manufacturer:onsemi
Product Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):365 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):50 A
Vce(on) (Max) @ Vge, Ic:2.2V @ 3.7V, 10A
Power - Max:165 W
Switching Energy:-
Input Type:Logic
Gate Charge:-
Td (on/off) @ 25°C:-
Test Condition:-
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK

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Quick Inquiry

In Stock 82339 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
800$0.81625$653
1600$0.73758$1180.128
2400$0.68840$1652.16
5600$0.65562$3671.472

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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