NCV1413BDR2G

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Part Number	NCV1413BDR2G
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays
Description	TRANS 7NPN DARL 50V 0.5A 16SOIC
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NCV1413BDR2G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 07 - Dec 11 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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NCV1413BDR2G Specifications

Part Number:	NCV1413BDR2G
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Arrays
Manufacturer:	onsemi
Product Status:	Active
Transistor Type:	7 NPN Darlington
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 350mA, 2V
Power - Max:	-
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	16-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	16-SOIC

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