MMBT5551LT3G

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Part Number	MMBT5551LT3G
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS NPN 160V 0.6A SOT23-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	MMBT5551LT3G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 06 - Nov 10 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
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MMBT5551LT3G Specifications

Part Number:	MMBT5551LT3G
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	onsemi
Product Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	600 mA
Voltage - Collector Emitter Breakdown (Max):	160 V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Power - Max:	225 mW
Frequency - Transition:	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)

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