MJE271G

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Part Number	MJE271G
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS PNP DARL 100V 2A TO126
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	MJE271G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 29 - Jan 02 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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MJE271G Specifications

Part Number:	MJE271G
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	onsemi
Product Status:	Obsolete
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1500 @ 120mA, 10V
Power - Max:	1.5 W
Frequency - Transition:	6MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126

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