MJD5731T4G

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Part Number	MJD5731T4G
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS PNP 350V 1A DPAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	MJD5731T4G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 13 - Dec 17 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

MJD5731T4G Specifications

Part Number:	MJD5731T4G
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	onsemi
Product Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	350 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 200mA, 1A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 300mA, 10V
Power - Max:	1.56 W
Frequency - Transition:	10MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

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