For Reference Only
| Part Number | HGTP5N120BND |
| Manufacturer | onsemi |
| Category | Discrete Semiconductor › Transistors - IGBTs - Single |
| Description | IGBT 1200V 21A 167W TO220AB |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | HGTP5N120BND PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 23 - Dec 27 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | HGTP5N120BND |
| Brand: | onsemi |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - IGBTs - Single |
| Manufacturer: | onsemi |
| Product Status: | Not For New Designs |
| IGBT Type: | NPT |
| Voltage - Collector Emitter Breakdown (Max): | 1200 V |
| Current - Collector (Ic) (Max): | 21 A |
| Current - Collector Pulsed (Icm): | 40 A |
| Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 5A |
| Power - Max: | 167 W |
| Switching Energy: | 450µJ (on), 390µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 53 nC |
| Td (on/off) @ 25°C: | 22ns/160ns |
| Test Condition: | 960V, 5A, 25Ohm, 15V |
| Reverse Recovery Time (trr): | 65 ns |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
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| In Stock | 51567 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 800 | $1.73513 | $1388.104 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
