HGTP12N60C3

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Part Number	HGTP12N60C3
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT 600V 24A 104W TO220AB
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	HGTP12N60C3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 16 - Dec 20 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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HGTP12N60C3 Specifications

Part Number:	HGTP12N60C3
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	onsemi
Product Status:	Obsolete
IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	24 A
Current - Collector Pulsed (Icm):	96 A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 12A
Power - Max:	104 W
Switching Energy:	380µJ (on), 900µJ (off)
Input Type:	Standard
Gate Charge:	48 nC
Td (on/off) @ 25°C:	-
Test Condition:	-
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3

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