HGTD1N120BNS9A

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Part Number	HGTD1N120BNS9A
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT 1200V 5.3A 60W TO252AA
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	HGTD1N120BNS9A PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 27 - Dec 31 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

HGTD1N120BNS9A Specifications

Part Number:	HGTD1N120BNS9A
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	onsemi
Product Status:	Active
IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	5.3 A
Current - Collector Pulsed (Icm):	6 A
Vce(on) (Max) @ Vge, Ic:	2.9V @ 15V, 1A
Power - Max:	60 W
Switching Energy:	70µJ (on), 90µJ (off)
Input Type:	Standard
Gate Charge:	14 nC
Td (on/off) @ 25°C:	15ns/67ns
Test Condition:	960V, 1A, 82Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252AA

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