HGT1S20N60A4S9A

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Part Number	HGT1S20N60A4S9A
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT 600V 70A 290W TO263AB
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	HGT1S20N60A4S9A PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 26 - Dec 30 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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HGT1S20N60A4S9A Specifications

Part Number:	HGT1S20N60A4S9A
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	onsemi
Product Status:	Obsolete
IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	70 A
Current - Collector Pulsed (Icm):	280 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 20A
Power - Max:	290 W
Switching Energy:	105µJ (on), 150µJ (off)
Input Type:	Standard
Gate Charge:	142 nC
Td (on/off) @ 25°C:	15ns/73ns
Test Condition:	390V, 20A, 3Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263)

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