HGT1S10N120BNST

HGT1S10N120BNST
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Part Number HGT1S10N120BNST
Manufacturer onsemi
Category Discrete SemiconductorTransistors - IGBTs - Single
Description IGBT 1200V 35A 298W TO263AB
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HGT1S10N120BNST PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 27 - Dec 31 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HGT1S10N120BNST Specifications

Part Number:HGT1S10N120BNST
Brand:onsemi
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Single
Manufacturer:onsemi
Product Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):35 A
Current - Collector Pulsed (Icm):80 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Power - Max:298 W
Switching Energy:320µJ (on), 800µJ (off)
Input Type:Standard
Gate Charge:100 nC
Td (on/off) @ 25°C:23ns/165ns
Test Condition:960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)

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Quick Inquiry

In Stock 33516 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
800$1.89606$1516.848
1600$1.61366$2581.856
2400$1.54125$3699

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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