HGT1S10N120BNST

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Part Number	HGT1S10N120BNST
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT 1200V 35A 298W TO263AB
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	HGT1S10N120BNST PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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HGT1S10N120BNST Specifications

Part Number:	HGT1S10N120BNST
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	onsemi
Product Status:	Active
IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	35 A
Current - Collector Pulsed (Icm):	80 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 10A
Power - Max:	298 W
Switching Energy:	320µJ (on), 800µJ (off)
Input Type:	Standard
Gate Charge:	100 nC
Td (on/off) @ 25°C:	23ns/165ns
Test Condition:	960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263)

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