FQB4N80TM

FQB4N80TM
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Part Number FQB4N80TM
Manufacturer onsemi
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 3.9A D2PAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models FQB4N80TM PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 29 - Dec 03 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

FQB4N80TM Specifications

Part Number:FQB4N80TM
Brand:onsemi
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:onsemi
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Quick Inquiry

In Stock 45996 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
800$0.95321$762.568
1600$0.86565$1385.04
2400$0.81093$1946.232
5600$0.77262$4326.672

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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