FDP2D9N12C

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Part Number	FDP2D9N12C
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	PTNG 120V N-FET TO220
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FDP2D9N12C PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 25 - Dec 29 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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FDP2D9N12C Specifications

Part Number:	FDP2D9N12C
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	onsemi
Product Status:	Last Time Buy
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	120 V
Current - Continuous Drain (Id) @ 25°C:	18A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	4V @ 686µA
Gate Charge (Qg) (Max) @ Vgs:	109 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	8894 pF @ 60 V
FET Feature:	-
Power Dissipation (Max):	2.4W (Ta), 333W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220
Package / Case:	TO-220-3

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