FDB86102LZ

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Part Number	FDB86102LZ
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 100V 8.3A/30A TO263
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FDB86102LZ PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 11 - Jan 15 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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FDB86102LZ Specifications

Part Number:	FDB86102LZ
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	onsemi
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	8.3A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	24mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	21 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1275 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	3.1W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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