EMF5XV6T1G

EMF5XV6T1G
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Part Number EMF5XV6T1G
Manufacturer onsemi
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Description TRANS PREBIAS 1NPN 1PNP SOT563
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models EMF5XV6T1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 28 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

EMF5XV6T1G Specifications

Part Number:EMF5XV6T1G
Brand:onsemi
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer:onsemi
Product Status:Active
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA, 500mA
Voltage - Collector Emitter Breakdown (Max):50V, 12V
Resistor - Base (R1):47kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max):500nA, 100nA (ICBO)
Frequency - Transition:-
Power - Max:357mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563

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