AFGB30T65SQDN

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Part Number	AFGB30T65SQDN
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	650V/30A FS4 IGBT TO263 A
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	AFGB30T65SQDN PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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AFGB30T65SQDN Specifications

Part Number:	AFGB30T65SQDN
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	onsemi
Product Status:	Active
IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	60 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 30A
Power - Max:	220 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	56 nC
Td (on/off) @ 25°C:	14.5ns/63.2ns
Test Condition:	400V, 30A, 6Ohm, 15V
Reverse Recovery Time (trr):	245 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK-3 (TO-263-3)

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