PHE13009/DG,127

PHE13009/DG,127
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Part Number PHE13009/DG,127
Manufacturer NXP USA Inc.
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single
Description NOW WEEN - PHE13009 - POWER BIPO
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models PHE13009/DG,127 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 01 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

PHE13009/DG,127 Specifications

Part Number:PHE13009/DG,127
Brand:NXP USA Inc.
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:NXP USA Inc.
Product Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):12 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:2V @ 1.6A, 8A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 5A, 5V
Power - Max:80 W
Frequency - Transition:-
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB

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Quick Inquiry

In Stock 62335 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.82000$0.82
10$0.71700$7.17
100$0.54990$54.99
500$0.43470$217.35
1000$0.34776$347.76

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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