PHD37N06LT,118

PHD37N06LT,118
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Part Number PHD37N06LT,118
Manufacturer NXP USA Inc.
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 37A DPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models PHD37N06LT,118 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 27 - Dec 31 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

PHD37N06LT,118 Specifications

Part Number:PHD37N06LT,118
Brand:NXP USA Inc.
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:NXP USA Inc.
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:32mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:22.5 nC @ 5 V
Vgs (Max):±13V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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