PDTD113ES,126

PDTD113ES,126
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Part Number PDTD113ES,126
Manufacturer NXP USA Inc.
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 500MW TO92-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models PDTD113ES,126 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Nov 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

PDTD113ES,126 Specifications

Part Number:PDTD113ES,126
Brand:NXP USA Inc.
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:NXP USA Inc.
Product Status:Obsolete
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):1 kOhms
Resistor - Emitter Base (R2):1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:500 mW
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3

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