PDTB123ES,126

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Part Number	PDTB123ES,126
Manufacturer	NXP USA Inc.
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased
Description	TRANS PREBIAS PNP 500MW TO92-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	PDTB123ES,126 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 16 - Nov 20 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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PDTB123ES,126 Specifications

Part Number:	PDTB123ES,126
Brand:	NXP USA Inc.
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:	NXP USA Inc.
Product Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	-
Power - Max:	500 mW
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

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