PDTA143EMB,315

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Part Number	PDTA143EMB,315
Manufacturer	NXP USA Inc.
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	NOW NEXPERIA PDTA143EMB - SMALL
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	PDTA143EMB,315 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 29 - Jan 02 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
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PDTA143EMB,315 Specifications

Part Number:	PDTA143EMB,315
Brand:	NXP USA Inc.
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	NXP USA Inc.
Product Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 10mA, 5V
Power - Max:	250 mW
Frequency - Transition:	180MHz
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	DFN1006B-3

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