PDTA113EMB,315

PDTA113EMB,315
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Part Number PDTA113EMB,315
Manufacturer NXP USA Inc.
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single, Pre-Biased
Description NOW NEXPERIA PDTA113EMB - SMALL
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models PDTA113EMB,315 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 09 - Sep 13 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

PDTA113EMB,315 Specifications

Part Number:PDTA113EMB,315
Brand:NXP USA Inc.
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:NXP USA Inc.
Product Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):1 kOhms
Resistor - Emitter Base (R2):1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 40mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:180 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:SC-101, SOT-883
Supplier Device Package:DFN1006B-3

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In Stock 44188 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
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Pricing (USD)

Qty. Unit Price Ext. Price
10000$0.04590$459

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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