BUK952R8-60E,127

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Part Number	BUK952R8-60E,127
Manufacturer	NXP USA Inc.
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 60V 120A TO220AB
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BUK952R8-60E,127 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 29 - Jan 02 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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BUK952R8-60E,127 Specifications

Part Number:	BUK952R8-60E,127
Brand:	NXP USA Inc.
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	NXP USA Inc.
Product Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	120 nC @ 5 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	17450 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	349W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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