BUK7E2R7-30B,127

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Part Number	BUK7E2R7-30B,127
Manufacturer	NXP USA Inc.
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 30V 75A I2PAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BUK7E2R7-30B,127 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

BUK7E2R7-30B,127 Specifications

Part Number:	BUK7E2R7-30B,127
Brand:	NXP USA Inc.
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	NXP USA Inc.
Product Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	91 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6212 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I2PAK
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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