BLF6G10LS-160RN112

BLF6G10LS-160RN112
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Part Number BLF6G10LS-160RN112
Manufacturer NXP USA Inc.
Category Discrete SemiconductorTransistors - Bipolar (BJT) - RF
Description RF POWER TRANSISTORS
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BLF6G10LS-160RN112 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 28 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BLF6G10LS-160RN112 Specifications

Part Number:BLF6G10LS-160RN112
Brand:NXP USA Inc.
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - RF
Manufacturer:NXP USA Inc.
Product Status:Active
Transistor Type:-
Voltage - Collector Emitter Breakdown (Max):-
Frequency - Transition:-
Noise Figure (dB Typ @ f):-
Gain:-
Power - Max:-
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Current - Collector (Ic) (Max):-
Operating Temperature:-
Mounting Type:-
Package / Case:-
Supplier Device Package:-

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In Stock 1223 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$81.82000$81.82

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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