BLA6G1011L-200RG112

BLA6G1011L-200RG112
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Part Number BLA6G1011L-200RG112
Manufacturer NXP USA Inc.
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single
Description POWER LDMOS TRANSISTOR, SOT502 (
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BLA6G1011L-200RG112 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 16 - Nov 20 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BLA6G1011L-200RG112 Specifications

Part Number:BLA6G1011L-200RG112
Brand:NXP USA Inc.
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:NXP USA Inc.
Product Status:Active
Transistor Type:-
Current - Collector (Ic) (Max):-
Voltage - Collector Emitter Breakdown (Max):-
Vce Saturation (Max) @ Ib, Ic:-
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Power - Max:-
Frequency - Transition:-
Operating Temperature:-
Mounting Type:-
Package / Case:-
Supplier Device Package:-

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In Stock 157 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$547.28000$547.28

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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