BLA6G1011L-200RG112

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Part Number	BLA6G1011L-200RG112
Manufacturer	NXP USA Inc.
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	POWER LDMOS TRANSISTOR, SOT502 (
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BLA6G1011L-200RG112 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 27 - Dec 01 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

BLA6G1011L-200RG112 Specifications

Part Number:	BLA6G1011L-200RG112
Brand:	NXP USA Inc.
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	NXP USA Inc.
Product Status:	Active
Transistor Type:	-
Current - Collector (Ic) (Max):	-
Voltage - Collector Emitter Breakdown (Max):	-
Vce Saturation (Max) @ Ib, Ic:	-
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Power - Max:	-
Frequency - Transition:	-
Operating Temperature:	-
Mounting Type:	-
Package / Case:	-
Supplier Device Package:	-

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