BC879,112

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Part Number	BC879,112
Manufacturer	NXP USA Inc.
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS NPN DARL 80V 1A TO92-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BC879,112 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 13 - Dec 17 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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BC879,112 Specifications

Part Number:	BC879,112
Brand:	NXP USA Inc.
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	NXP USA Inc.
Product Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	1.8V @ 1mA, 1A
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	2000 @ 500mA, 10V
Power - Max:	830 mW
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

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