A2G35S200-01SR3

A2G35S200-01SR3
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Part Number A2G35S200-01SR3
Manufacturer NXP USA Inc.
Category Discrete SemiconductorTransistors - FETs, MOSFETs - RF
Description AIRFAST RF POWER GAN TRANSISTOR
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models A2G35S200-01SR3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 28 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

A2G35S200-01SR3 Specifications

Part Number:A2G35S200-01SR3
Brand:NXP USA Inc.
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - RF
Manufacturer:NXP USA Inc.
Product Status:Active
Transistor Type:GaN HEMT
Frequency:3.4GHz ~ 3.6GHz
Gain:16.1dB
Voltage - Test:48 V
Current Rating (Amps):-
Noise Figure:-
Current - Test:291 mA
Power - Output:180W
Voltage - Rated:125 V
Package / Case:NI-400S-2S
Supplier Device Package:NI-400S-2S

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In Stock 634 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
250$123.43584$30858.96

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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