NTE2018

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Part Number	NTE2018
Manufacturer	NTE Electronics, Inc
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays
Description	IC-8 CHAN CMOS/TTL DR 18-PIN DIP
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NTE2018 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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NTE2018 Specifications

Part Number:	NTE2018
Brand:	NTE Electronics, Inc
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Arrays
Manufacturer:	NTE Electronics, Inc
Product Status:	Active
Transistor Type:	8 NPN Darlington
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 350mA, 500A
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Power - Max:	1W
Frequency - Transition:	-
Operating Temperature:	-20°C ~ 85°C (TA)
Mounting Type:	Through Hole
Package / Case:	18-DIP (0.300", 7.62mm)
Supplier Device Package:	18-PDIP

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