MJ10012

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Part Number	MJ10012
Manufacturer	NTE Electronics, Inc
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS NPN DARL 400V 10A TO3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	MJ10012 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 30 - Dec 04 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

MJ10012 Specifications

Part Number:	MJ10012
Brand:	NTE Electronics, Inc
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	NTE Electronics, Inc
Product Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	10 A
Voltage - Collector Emitter Breakdown (Max):	400 V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 2A, 10A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 3A, 6V
Power - Max:	175 W
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-204AA, TO-3
Supplier Device Package:	TO-3

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