PSMN1R9-40YSDX

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Part Number	PSMN1R9-40YSDX
Manufacturer	Nexperia USA Inc.
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 40V 200A LFPAK56
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	PSMN1R9-40YSDX PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 29 - Dec 03 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

PSMN1R9-40YSDX Specifications

Part Number:	PSMN1R9-40YSDX
Brand:	Nexperia USA Inc.
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Nexperia USA Inc.
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	80 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6198 pF @ 20 V
FET Feature:	Schottky Diode (Body)
Power Dissipation (Max):	194W (Ta)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	LFPAK56, Power-SO8
Package / Case:	SC-100, SOT-669

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