PMZB370UNE,315-NEX

PMZB370UNE,315-NEX
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Part Number PMZB370UNE,315-NEX
Manufacturer Nexperia USA Inc.
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description EFFECT TRANSISTOR, 0.9A I(D), 30
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models PMZB370UNE,315-NEX PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 16 - Nov 20 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

PMZB370UNE,315-NEX Specifications

Part Number:PMZB370UNE,315-NEX
Brand:Nexperia USA Inc.
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Nexperia USA Inc.
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:490mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.16 nC @ 15 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:78 pF @ 25 V
FET Feature:-
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN

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