PHB191NQ06LT,118

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Part Number	PHB191NQ06LT,118
Manufacturer	Nexperia USA Inc.
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 55V 75A D2PAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	PHB191NQ06LT,118 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 10 - Nov 14 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

PHB191NQ06LT,118 Specifications

Part Number:	PHB191NQ06LT,118
Brand:	Nexperia USA Inc.
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Nexperia USA Inc.
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	3.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	95.6 nC @ 5 V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	7665 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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