PDTA123JQAZ

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Part Number	PDTA123JQAZ
Manufacturer	Nexperia USA Inc.
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased
Description	TRANS PREBIAS PNP 3DFN
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	PDTA123JQAZ PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

PDTA123JQAZ Specifications

Part Number:	PDTA123JQAZ
Brand:	Nexperia USA Inc.
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:	Nexperia USA Inc.
Product Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	1µA
Frequency - Transition:	180 MHz
Power - Max:	280 mW
Mounting Type:	Surface Mount
Package / Case:	3-XDFN Exposed Pad
Supplier Device Package:	DFN1010D-3

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