NHDTA123JTR

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Part Number	NHDTA123JTR
Manufacturer	Nexperia USA Inc.
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased
Description	NHDTA123JT/SOT23/TO-236AB
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NHDTA123JTR PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 24 - Nov 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

NHDTA123JTR Specifications

Part Number:	NHDTA123JTR
Brand:	Nexperia USA Inc.
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:	Nexperia USA Inc.
Product Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	80 V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	100mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	100nA
Frequency - Transition:	150 MHz
Power - Max:	250 mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB

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