APTM100DA18CT1G

APTM100DA18CT1G
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Part Number APTM100DA18CT1G
Manufacturer Microsemi Corporation
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 40A SP1
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models APTM100DA18CT1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 11 - Dec 15 2025(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

APTM100DA18CT1G Specifications

Part Number:APTM100DA18CT1G
Brand:Microsemi Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Microsemi Corporation
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:216mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:570 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:14800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):657W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SP1
Package / Case:SP1

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In Stock 80000 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.00000$0

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