JAN2N3867P

JAN2N3867P
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Part Number JAN2N3867P
Manufacturer Microchip Technology
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single
Description POWER BJT
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models JAN2N3867P PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

JAN2N3867P Specifications

Part Number:JAN2N3867P
Brand:Microchip Technology
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Microchip Technology
Product Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 500mA, 1V
Power - Max:1 W
Frequency - Transition:-
Operating Temperature:-55°C ~ 200°C
Mounting Type:Through Hole
Package / Case:TO-205AA, TO-5-3 Metal Can
Supplier Device Package:TO-5AA

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Quick Inquiry

In Stock 3036 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$35.23500$35.235

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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