JAN1N5811US

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Part Number	JAN1N5811US
Manufacturer	Microchip Technology
Category	Discrete Semiconductor › Diodes - Rectifiers - Single
Description	DIODE GEN PURP 150V 6A B-MELF
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	JAN1N5811US PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 27 - Dec 31 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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JAN1N5811US Specifications

Part Number:	JAN1N5811US
Brand:	Microchip Technology
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Diodes - Rectifiers - Single
Manufacturer:	Microchip Technology
Product Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	150 V
Current - Average Rectified (Io):	6A
Voltage - Forward (Vf) (Max) @ If:	875 mV @ 4 A
Speed:	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):	30 ns
Current - Reverse Leakage @ Vr:	5 µA @ 150 V
Capacitance @ Vr, F:	60pF @ 10V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	SQ-MELF, B
Supplier Device Package:	B, SQ-MELF
Operating Temperature - Junction:	-65°C ~ 175°C

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